?2002 fairchild semiconductor corporation january 2002 isl9r460p2, ISL9R460S2, isl9r460s3s isl9r460p2, ISL9R460S2, isl9r460s3s rev. b isl9r460p2, ISL9R460S2, isl9r460s3s 4a, 600v stealth? diode general description the isl9r460p2, ISL9R460S2 and isl9r460s3s are stealth? diodes optimized for low loss performance in high frequency hard switched applications. the stealth? family exhibits low reverse recovery current (i rrm ) and exceptionally soft recovery under typical operating conditions. this device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. the low i rrm and short t a phase reduce loss in switching transistors. the soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. consider using the stealth? diode with an smps igbt to provide the most ef?cient and highest power density design at lower cost. formerly developmental type ta49408. features ? soft recovery. . . . . . . . . . . . . . . . . . . . . t b / t a > 3 ? fast recovery . . . . . . . . . . . . . . . . . . . . t rr < 20ns ? operating temperature . . . . . . . . . . . . . . . 175 o c ? reverse voltage. . . . . . . . . . . . . . . . . . . . . . 600v ? avalanche energy rated applications ? switch mode power supplies ? hard switched pfc boost diode ? ups free wheeling diode ? motor drive fwd ? smps fwd ? snubber diode device maximum ratings t c = 25c unless otherwise noted symbol parameter ratings units v rrm peak repetitive reverse voltage 600 v v rwm working peak reverse voltage 600 v v r dc blocking voltage 600 v i f(av) average recti?ed forward current 4 a i frm repetitive peak surge current (20khz square wave) 8 a i fsm nonrepetitive peak surge current (halfwave 1 phase 60hz) 50 a p d power dissipation 58 w e avl avalanche energy (1a, 20mh) 10 mj t j , t stg operating and storage temperature range -55 to 175 ?c t l t pkg maximum temperature for soldering leads at 0.063in (1.6mm) from case for 10s package body for 10s, see techbrief tb334 300 260 ?c ?c caution: stresses above those listed in absolute maximum ratings may cause permanent damage to the device. this is a stress o nly rating and operation of the device at these or any other conditions above those indicated in the operational sections of this speci?cation is not implied. k a cathode (flange) cathode anode jedec style to-262 jedec to-220ac cathode (flange) anode n/c cathode (flange) cathode anode jedec to-263ab package symbol
?2002 fairchild semiconductor corporation isl9r460p2, ISL9R460S2, isl9r460s3s rev. b isl9r460p2, ISL9R460S2, isl9r460s3s package marking and ordering information electrical characteristics t c = 25c unless otherwise noted off state characteristics on state characteristics dynamic characteristics switching characteristics thermal characteristics device marking device package tape width quantity r460p2 isl9r460p2 to-220ac - - r460s2 ISL9R460S2 to-262 - - r460s3s isl9r460s3s to-263ab - - r460s3s isl9r460s3st to-263ab 24mm 800 symbol parameter test conditions min typ max units i r instantaneous reverse current v r = 600v t c = 25?c - - 100 a t c = 125?c - - 1.0 ma v f instantaneous forward voltage i f = 4a t c = 25?c - 2.0 2.4 v t c = 125?c - 1.6 2.0 v c j junction capacitance v r = 10v, i f = 0a - 19 - pf t rr reverse recovery time i f = 1a, d if /dt = 100a/ s, v r = 30v - 17 20 ns i f = 4a, d if /dt = 100a/ s, v r = 30v - 19 22 ns t rr reverse recovery time i f = 4a, d if /dt = 200a/ s, v r = 390v, t c = 25?c -17-ns i rrm maximum reverse recovery current - 2.6 - a q rr reverse recovery charge - 22 - nc t rr reverse recovery time i f = 4a, d if /dt = 200a/ s, v r = 390v, t c = 125?c -77-ns s softness factor (t b /t a )-4.2- i rrm maximum reverse recovery current - 2.8 - a q rr reverse recovery charge - 100 - nc t rr reverse recovery time i f = 4a, d if /dt = 400a/ s, v r = 390v, t c = 125?c -54-ns s softness factor (t b /t a )-3.5- i rrm maximum reverse recovery current - 4.3 - a q rr reverse recovery charge 110 - nc di m /dt maximum di/dt during t b - 500 - a/s r jc thermal resistance junction to case - - 2.6 ?c/w r ja thermal resistance junction to ambient to-220 - - 62 ?c/w r ja thermal resistance junction to ambient to-262 - - 62 ?c/w r ja thermal resistance junction to ambient to-263 62 ?c/w
?2002 fairchild semiconductor corporation isl9r460p2, ISL9R460S2, isl9r460s3s rev. b isl9r460p2, ISL9R460S2, isl9r460s3s typical performance curves figure 1.forward current vs forward voltage figure 2.reverse current vs reverse voltage figure 3.t a and t b curves vs forward current figure 4.t a and t b curves vs di f /dt figure 5.maximum reverse recovery current vs forward current figure 6.maximum reverse recovery current vs di f /dt v f , forward voltage (v) i f , forward current (a) 0 0.5 1 1.5 2 2.5 0 1 2 3 4 5 6 7 8 3 25 o c 175 o c 100 o c 150 o c v r , reverse voltage (v) i r , reverse current ( a) 100 10 1 100 200 300 500 600 400 0.1 600 25 o c 175 o c 150 o c 125 o c 100 o c 75 o c i f , forward current (a) 0 20 30 40 50 70 58 t, recovery times (ns) 80 90 1234 67 v r = 390v, t j = 125 o c t b at di f /dt = 200a/s, 500a/s, 800a/s t a at di f /dt = 200a/s, 500a/s, 800a/s 60 10 di f /dt, current rate of change (a/ s) 100 0 20 40 60 80 700 1000 t, recovery times (ns) 200 300 400 500 600 800 900 100 120 v r = 390v, t j = 125 o c t b at i f = 8a, 4a, 2a t a at i f = 8a, 4a, 2a i f , forward current (a) 1 2 3 4 5 6 7 8 i rrm , max reverse recovery current (a) di f /dt = 800a/s di f /dt = 500a/s di f /dt = 200a/s v r = 390v, t j = 125 o c 2345678 di f /dt, current rate of change (a/ s) 100 1 2 3 4 5 6 700 1000 i rrm , max reverse recovery current (a) v r = 390v, t j = 125 o c i f = 8a i f = 2a 7 8 200 300 400 500 600 800 900 i f = 4a
?2002 fairchild semiconductor corporation isl9r460p2, ISL9R460S2, isl9r460s3s rev. b isl9r460p2, ISL9R460S2, isl9r460s3s figure 7.reverse recovery softness factor vs di f /dt figure 8.reverse recovery charge vs di f /dt figure 9. junction capacitance vs reverse voltage figure 10. normalized maximum transient thermal impedance typical performance curves (continued) di f /dt, current rate of change (a/ s) 100 1 2 3 4 5 6 700 1000 v r = 390v, t j = 125 o c i f = 4a i f = 8a i f = 2a s, reverse recovery softness factor 200 300 400 500 600 800 900 di f /dt, current rate of change (a/ s) 60 80 100 120 140 160 180 q rr , reverse recovery charge (nc) 100 700 1000 200 300 400 500 600 800 900 v r = 390v, t j = 125 o c i f = 8a i f = 4a i f = 2a v r , reverse voltage (v) c j , junction capacitance (pf) 0 200 400 600 800 1000 1600 100 1.0 0.03 0.1 10 1200 1400 1800 t, rectangular pulse duration (s) 10 -5 10 -2 10 -1 z ja , normalized thermal impedance 0.01 10 -4 10 -3 single pulse 10 0 0.1 10 1 duty cycle - descending order 0.5 0.2 0.1 0.05 0.01 0.02 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z ja x r ja + t a p dm t 1 t 2 1.0
?2002 fairchild semiconductor corporation isl9r460p2, ISL9R460S2, isl9r460s3s rev. b isl9r460p2, ISL9R460S2, isl9r460s3s test circuit and waveforms figure 11. it rr test circuit figure 12.t rr waveforms and definitions figure 13. avalanche energy test circuit figure 14.avalanche current and voltage waveforms r g l v dd mosfet current sense dut v ge t 1 t 2 v ge amplitude and t 1 and t 2 control i f r g control di f /dt + - dt di f i f t rr t a t b 0 i rm 0.25 i rm dut current sense + lr v dd r < 0.1 ? e avl = 1/2li 2 [v r(avl) /(v r(avl) - v dd )] q 1 = igbt (bv ces > dut v r(avl) ) - v dd q 1 i = 1a l = 20mh v dd = 50v iv t 0 t 1 t 2 i l v avl t i l
disclaimer fairchild semiconductor reserves the right to make changes without further notice t o any products herein t o improve reliability , function or design. fairchild does not assume any liability arising out of the applica tion or use of any product or circuit described herein; neither does it convey any license under its p a tent rights, nor the rights of others. trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information preliminary no identification needed obsolete this datasheet contains the design specifications for product development. specifications may change in any manner without notice. this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. formative or in design first production full production not in production optologic? optoplanar? pacman? pop? power247? powertrench qfet? qs? qt optoelectronics? quiet series? silent switcher fast fastr? frfet? globaloptoisolator? gto? hisec? isoplanar? littlefet? microfet? micropak? microwire? rev. h4 a acex? bottomless? coolfet? crossvolt ? densetrench? dome? ecospark? e 2 cmos tm ensigna tm fact? fact quiet series? smart start? star*power? stealth? supersot?-3 supersot?-6 supersot?-8 syncfet? tinylogic? trutranslation? uhc? ultrafet a a a star*power is used under license vcx?
|
